---
_id: '8763'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: M.
full_name: Versen, M.
last_name: Versen
- first_name: M. D.
full_name: Schneider, M. D.
last_name: Schneider
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in
selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities.
Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660
apa: Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased
mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with
high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660
bibtex: '@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility
anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
densities}, DOI={10.1063/1.373660},
journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and
Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }'
chicago: Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility
Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron
Densities.” Journal of Applied Physics, 2002, 321–25. https://doi.org/10.1063/1.373660.
ieee: D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility
anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
densities,” Journal of Applied Physics, pp. 321–325, 2002.
mla: Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs
Heterostructures with High Electron Densities.” Journal of Applied Physics,
2002, pp. 321–25, doi:10.1063/1.373660.
short: D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics
(2002) 321–325.
date_created: 2019-04-01T07:33:21Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.373660
language:
- iso: eng
page: 321-325
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures
with high electron densities
type: journal_article
user_id: '42514'
year: '2002'
...