--- _id: '8763' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: M. full_name: Versen, M. last_name: Versen - first_name: M. D. full_name: Schneider, M. D. last_name: Schneider - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660 apa: Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660 bibtex: '@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={10.1063/1.373660}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }' chicago: Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, 321–25. https://doi.org/10.1063/1.373660. ieee: D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” Journal of Applied Physics, pp. 321–325, 2002. mla: Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, pp. 321–25, doi:10.1063/1.373660. short: D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325. date_created: 2019-04-01T07:33:21Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.373660 language: - iso: eng page: 321-325 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities type: journal_article user_id: '42514' year: '2002' ...