Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography Reuter, Dirk Kähler, D Kunze, U Wieck, A D 2002 info:eu-repo/semantics/article doc-type:article text http://purl.org/coar/resource_type/c_6501 https://ris.uni-paderborn.de/record/8768 Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a> eng info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/16/7/314 info:eu-repo/semantics/altIdentifier/issn/0268-1242 info:eu-repo/semantics/altIdentifier/issn/1361-6641 info:eu-repo/semantics/closedAccess