{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-04-01T07:56:38Z","citation":{"mla":"Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, pp. 603–07, doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>.","bibtex":"@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }","ama":"Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>. 2002:603-607. doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>","ieee":"D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.","apa":"Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>, 603–607. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>","short":"D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.","chicago":"Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>."},"publication":"Semiconductor Science and Technology","user_id":"42514","doi":"10.1088/0268-1242/16/7/314","_id":"8768","language":[{"iso":"eng"}],"page":"603-607","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","publication_identifier":{"issn":["0268-1242","1361-6641"]},"author":[{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Kähler","first_name":"D","full_name":"Kähler, D"},{"full_name":"Kunze, U","last_name":"Kunze","first_name":"U"},{"first_name":"A D","last_name":"Wieck","full_name":"Wieck, A D"}],"year":"2002","title":"Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography","status":"public"}