<?xml version="1.0" encoding="UTF-8"?>

<modsCollection xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.loc.gov/mods/v3" xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-3.xsd">
<mods version="3.3">

<genre>article</genre>

<titleInfo><title>Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography</title></titleInfo>


<note type="publicationStatus">published</note>



<name type="personal">
  <namePart type="given">Dirk</namePart>
  <namePart type="family">Reuter</namePart>
  <role><roleTerm type="text">author</roleTerm> </role><identifier type="local">37763</identifier></name>
<name type="personal">
  <namePart type="given">D</namePart>
  <namePart type="family">Kähler</namePart>
  <role><roleTerm type="text">author</roleTerm> </role></name>
<name type="personal">
  <namePart type="given">U</namePart>
  <namePart type="family">Kunze</namePart>
  <role><roleTerm type="text">author</roleTerm> </role></name>
<name type="personal">
  <namePart type="given">A D</namePart>
  <namePart type="family">Wieck</namePart>
  <role><roleTerm type="text">author</roleTerm> </role></name>







<name type="corporate">
  <namePart></namePart>
  <identifier type="local">15</identifier>
  <role>
    <roleTerm type="text">department</roleTerm>
  </role>
</name>

<name type="corporate">
  <namePart></namePart>
  <identifier type="local">230</identifier>
  <role>
    <roleTerm type="text">department</roleTerm>
  </role>
</name>









<originInfo><dateIssued encoding="w3cdtf">2002</dateIssued>
</originInfo>
<language><languageTerm authority="iso639-2b" type="code">eng</languageTerm>
</language>



<relatedItem type="host"><titleInfo><title>Semiconductor Science and Technology</title></titleInfo>
  <identifier type="issn">0268-1242</identifier>
  <identifier type="issn">1361-6641</identifier><identifier type="doi">10.1088/0268-1242/16/7/314</identifier>
<part><extent unit="pages">603-607</extent>
</part>
</relatedItem>


<extension>
<bibliographicCitation>
<apa>Reuter, D., Kähler, D., Kunze, U., &amp;#38; Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. &lt;i&gt;Semiconductor Science and Technology&lt;/i&gt;, 603–607. &lt;a href=&quot;https://doi.org/10.1088/0268-1242/16/7/314&quot;&gt;https://doi.org/10.1088/0268-1242/16/7/314&lt;/a&gt;</apa>
<ieee>D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” &lt;i&gt;Semiconductor Science and Technology&lt;/i&gt;, pp. 603–607, 2002.</ieee>
<chicago>Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” &lt;i&gt;Semiconductor Science and Technology&lt;/i&gt;, 2002, 603–7. &lt;a href=&quot;https://doi.org/10.1088/0268-1242/16/7/314&quot;&gt;https://doi.org/10.1088/0268-1242/16/7/314&lt;/a&gt;.</chicago>
<short>D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.</short>
<mla>Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” &lt;i&gt;Semiconductor Science and Technology&lt;/i&gt;, 2002, pp. 603–07, doi:&lt;a href=&quot;https://doi.org/10.1088/0268-1242/16/7/314&quot;&gt;10.1088/0268-1242/16/7/314&lt;/a&gt;.</mla>
<ama>Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. &lt;i&gt;Semiconductor Science and Technology&lt;/i&gt;. 2002:603-607. doi:&lt;a href=&quot;https://doi.org/10.1088/0268-1242/16/7/314&quot;&gt;10.1088/0268-1242/16/7/314&lt;/a&gt;</ama>
<bibtex>@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={&lt;a href=&quot;https://doi.org/10.1088/0268-1242/16/7/314&quot;&gt;10.1088/0268-1242/16/7/314&lt;/a&gt;}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }</bibtex>
</bibliographicCitation>
</extension>
<recordInfo><recordIdentifier>8768</recordIdentifier><recordCreationDate encoding="w3cdtf">2019-04-01T07:56:38Z</recordCreationDate><recordChangeDate encoding="w3cdtf">2022-01-06T07:04:00Z</recordChangeDate>
</recordInfo>
</mods>
</modsCollection>
