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1146 Publications


1999 | Journal Article | LibreCat-ID: 7693
Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells
S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607.
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1999 | Journal Article | LibreCat-ID: 13768
(2×4)GaP(001) surface: Atomic structure and optical anisotropy
A.M. Frisch, W.G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter, Physical Review B 60 (1999) 2488–2494.
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1999 | Journal Article | LibreCat-ID: 13769
Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces
W.G. Schmidt, E.L. Briggs, J. Bernholc, F. Bechstedt, Physical Review B 59 (1999) 2234–2239.
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1999 | Journal Article | LibreCat-ID: 13764
Ab initio calculation of linear and nonlinear optical properties of semiconductor structures
F. Bechstedt, B. Adolph, W.G. Schmidt, Brazilian Journal of Physics 29 (1999).
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1998 | Journal Article | LibreCat-ID: 13772
Geometry and electronic structure of InP(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 409 (1998) 474–484.
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1998 | Journal Article | LibreCat-ID: 13773
Atomic structure of InP(001)-(2×4): A dimer reconstruction
W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter, Physical Review B 57 (1998) 14596–14599.
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1998 | Journal Article | LibreCat-ID: 13774
In-induced (4 × 2) reconstructions of GaAs(001) surfaces
W.G. Schmidt, P. Käckell, F. Bechstedt, Applied Surface Science 123–124 (1998) 136–140.
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1998 | Journal Article | LibreCat-ID: 7694
Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy
R.D. Tscheuschner, S. Hoch, E. Leschinsky, C. Meier, S. Theis, A.D. Wieck, International Journal of Modern Physics B 12 (1998) 1147–1170.
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1998 | Journal Article | LibreCat-ID: 13771
Reflectance Anisotropy of GaAs(100): Theory and Experiment
A.I. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley, R. Del Sole, Physical Review Letters 81 (1998) 721–724.
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1997 | Journal Article | LibreCat-ID: 13777
As on InP(110) studied within density-functional theory
U. Grossner, W.G. Schmidt, F. Bechstedt, Physical Review B 56 (1997) 6719–6726.
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1997 | Journal Article | LibreCat-ID: 13859
A High Resolution Investigation of the Anisotropic Electron-Positron Momentum Distribution in Diamond
R.W.N. Nilen, S.H. Connell, D.T. Britton, C.G. Fischer, E.J. Sendezera, W.G. Schmidt, J.P.F. Sellschop, W.S. Verwoerd, Materials Science Forum 255–257 (1997) 475–478.
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1997 | Journal Article | LibreCat-ID: 13778
Chemisorption of arsenic on InP(110)
U. Großner, W.G. Schmidt, F. Bechstedt, P.V. Santos, B. Koopmans, N. Esser, Surface Science 377–379 (1997) 619–622.
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1997 | Journal Article | LibreCat-ID: 13780
Antimony-stabilized GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 55 (1997) 13051–13057.
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1997 | Journal Article | LibreCat-ID: 13781
Electron-positron momentum density distribution in diamond
R.W.N. Nilen, S.H. Connell, W.G. Schmidt, D.T. Britton, W.S. Verwoerd, J.P.F. Sellschop, S. Shrivastava, Applied Surface Science 116 (1997) 330–334.
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1997 | Journal Article | LibreCat-ID: 13779
Comparison of As-rich and Sb-terminated GaAs(100)(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 377–379 (1997) 11–14.
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1997 | Journal Article | LibreCat-ID: 13775
(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces
W.G. Schmidt, Applied Physics A: Materials Science & Processing 65 (1997) 581–586.
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1997 | Journal Article | LibreCat-ID: 13776
The anisotropic electron - positron momentum distribution in diamond
R.W.N. Nilen, S.H. Connell, D.T. Britton, C.G. Fischer, E.J. Sendezera, P. Schaaff, W.G. Schmidt, J.P.F. Sellschop, W.S. Verwoerd, Journal of Physics: Condensed Matter 9 (1997) 6323–6333.
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1996 | Journal Article | LibreCat-ID: 13784
Optical Properties of Ordered As Layers on InP(110) Surfaces
P.V. Santos, B. Koopmans, N. Esser, W.G. Schmidt, F. Bechstedt, Physical Review Letters 77 (1996) 759–762.
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1996 | Journal Article | LibreCat-ID: 13789
Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
A. Scholze, W.G. Schmidt, F. Bechstedt, Physical Review B 53 (1996) 13725–13733.
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1996 | Journal Article | LibreCat-ID: 13791
Diamond (111) and (100) surface reconstructions
A. Scholze, W.G. Schmidt, F. Bechstedt, Thin Solid Films 281–282 (1996) 256–259.
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1996 | Journal Article | LibreCat-ID: 13785
Atomic structures of GaAs(100)-(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 360 (1996) L473–L477.
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1996 | Journal Article | LibreCat-ID: 13792
Phonons at III–V (110) surfaces
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Surface Science 352–354 (1996) 83–88.
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1996 | Journal Article | LibreCat-ID: 13786
Adatoms and vacancies on the diamond(111) surface
F. Bechstedt, W.G. Schmidt, A. Scholze, Europhysics Letters (EPL) 35 (1996) 585–590.
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1996 | Journal Article | LibreCat-ID: 13793
Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?
W.G. Schmidt, A. Scholze, F. Bechstedt, Surface Science 351 (1996) 183–188.
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1996 | Journal Article | LibreCat-ID: 13782
Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface
N. Esser, A.I. Shkrebtii, U. Resch-Esser, C. Springer, W. Richter, W.G. Schmidt, F. Bechstedt, R. Del Sole, Physical Review Letters 77 (1996) 4402–4405.
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1996 | Journal Article | LibreCat-ID: 13794
Se-induced 3d core-level shifts of GaAs(110)
P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146.
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1996 | Journal Article | LibreCat-ID: 13787
Adsorption of group-V elements on III–V (1 1 0) surfaces
W. Schmidt, Surface Science Reports 25 (1996) 141–223.
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1996 | Journal Article | LibreCat-ID: 13795
Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure
A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161.
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1996 | Journal Article | LibreCat-ID: 13783
Geometry and electronic structure of GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 54 (1996) 16742–16748.
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1996 | Journal Article | LibreCat-ID: 13788
Annihilation of delocalized positrons: a comparison of diamond and silicon
W.G. Schmidt, W.. Verwoerd, Physics Letters A 222 (1996) 275–280.
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1996 | Journal Article | LibreCat-ID: 13790
3d core-level shifts at
W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.
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1995 | Journal Article | LibreCat-ID: 13796
Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.
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1995 | Journal Article | LibreCat-ID: 13797
Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.
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1995 | Journal Article | LibreCat-ID: 13800
Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.
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1995 | Journal Article | LibreCat-ID: 13850
Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.
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1995 | Journal Article | LibreCat-ID: 13798
III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.
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1995 | Journal Article | LibreCat-ID: 13801
III-V(110)/Sb(1 ML): structural and dynamical properties
W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.
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1995 | Journal Article | LibreCat-ID: 13851
Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.
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1995 | Journal Article | LibreCat-ID: 13799
Se/GaAs(110): energetics and structure
W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.
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1995 | Journal Article | LibreCat-ID: 13852
Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.
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1994 | Journal Article | LibreCat-ID: 13854
First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
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1994 | Journal Article | LibreCat-ID: 13855
Coverage-dependent bonding of Sb on GaAs (110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Surface Science 307–309 (1994) 235–240.
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1994 | Journal Article | LibreCat-ID: 13856
Chemisorption of antimony on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744.
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1994 | Journal Article | LibreCat-ID: 13853
Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations
F. Bechstedt, W.G. Schmidt, B. Wenzien, Europhysics Letters (EPL) 25 (1994) 357–362.
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1993 | Journal Article | LibreCat-ID: 13857
Chemisorption of aluminium on GaAs(110)
W.G. Schmidt, G.P. Srivastava, Journal of Physics: Condensed Matter 5 (1993) 9025–9036.
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1993 | Journal Article | LibreCat-ID: 13858
AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Czechoslovak Journal of Physics 43 (1993) 1003–1007.
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