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983 Publications
1995 | Conference Paper | LibreCat-ID: 43604
Meier, T., Kuhl, J., Mayer, E. J., Smith, G. O., Schulze, A., Bennhardt, D., Koch, S. W., Thomas, P., Hey, R., & Ploog, K. (1995). Biexciton Contributions to the Excitonic Nonlinearity in GaAs Quantum Wells. In D. J. Lockwood (Ed.), Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS (pp. 1776–1779). World Scientific.
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1995 | Conference Paper | LibreCat-ID: 43451
Meier, T., Feldmann, J., Koch, M., von Plessen, G., Stolz, W., Thomas, P., & Göbel, E. O. (1995). Coherent dynamics of exciton wave packets in quantum wells and superlattices. In D. J. Lockwood (Ed.), Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS (pp. 1296–1303). World Scientific.
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1995 | Journal Article | LibreCat-ID: 43452
Meier, T., Mayer, E. J., Smith, G. O., Heuckeroth, V., Kuhl, J., Bott, K., Schulze, A., Koch, S. W., Thomas, P., Hey, R., & Ploog, K. (1995). Polarization dependence of beating phenomena at the energetically lowest exciton transition in GaAs quantum wells. Physical Review B, 51(16), 10909–10914. https://doi.org/10.1103/PhysRevB.51.10909
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1995 | Journal Article | LibreCat-ID: 43581
Meier, T., Rossi, F., Thomas, P., Koch, S. W., Selbmann, P. E., & Molinari, E. (1995). Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis. Physical Review B, 51(23), 16943–16953. https://doi.org/10.1103/PhysRevB.51.16943
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1995 | Journal Article | LibreCat-ID: 43575
Meier, T., Schulze, A., Thomas, P., Vaupel, H., & Maschke, K. (1995). Signatures of Fano-resonances in four-wave mixing experiments. Physical Review B, 51(20), 13977–13986. https://doi.org/10.1103/PhysRevB.51.13977
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1995 | Conference Paper | LibreCat-ID: 43568
Meier, T., Rossi, F., Je, K.-C., Hader, J., Thomas, P., & Koch, S. W. (1995). Linear and Non-linear Optical Properties of Semiconductor Superlattices: Excitonic and Field-Induced Effects. Proceedings of IV International Conference on Optics of Excitons in Confined Systems, 17, 1693–1697. https://doi.org/10.1007/BF02457265
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1995 | Conference Paper | LibreCat-ID: 43571
Meier, T., von Plessen, G., Koch, M., Feldmann, J., Koch, S. W., Thomas, P., Göbel, E. O., Goosen, K. W., Kuo, J. M., & Kopf, R. F. (1995). Electric-Field-Induced Exciton Ionization in a GaAs/AlGaAs Superlattice. Proceedings of IV International Conference on Optics of Excitons in Confined Systems, 17, 1759–1762. https://doi.org/10.1007/BF02457276
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1995 | Conference Paper | LibreCat-ID: 44278
Meier, T., Albrecht, T. F., Schulze, A., Koch, M., Bott, K., Feldmann, J., Stolz, W., Kuhl, J., Mayer, E. J., Koch, S. W., Göbel, E. O., & Cundiff, S. T. (1995). Quantum beats from biexcitons in narrow quantum wells: polarization and density dependence. Quantum Electronics and Laser Science Conference, Article QFB2. Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States.
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1995 | Conference Paper | LibreCat-ID: 44277
Meier, T., Kuhl, J., Mayer, E. J., Smith, G. O., Bott, K., Heuckeroth, V., Thomas, P., Koch, M., Hey, R., & Ploog, K. (1995). Polarization dependence of quantum beats between light-hole and heavy-hole excitons in GaAs quantum wells. Quantum Electronics and Laser Science Conference, Article QFD6. Quantum Electronics and Laser Science Conference 1995, Baltimore, Maryland United States.
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1995 | Journal Article | LibreCat-ID: 13796
Santos, P. V., Esser, N., Groenen, J., Cardona, M., Schmidt, W. G., & Bechstedt, F. (1995). Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(24), 17379–17385. https://doi.org/10.1103/physrevb.52.17379
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1995 | Journal Article | LibreCat-ID: 13798
Schmidt, W. G., Bechstedt, F., & Srivastava, G. P. (1995). III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B, 52(3), 2001–2007. https://doi.org/10.1103/physrevb.52.2001
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1995 | Journal Article | LibreCat-ID: 13797
Santos, P. V., Esser, N., Cardona, M., Schmidt, W. G., & Bechstedt, F. (1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(16), 12158–12167. https://doi.org/10.1103/physrevb.52.12158
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1995 | Journal Article | LibreCat-ID: 13799
Schmidt, W. G., & Bechstedt, F. (1995). Se/GaAs(110): energetics and structure. Surface Science, 331–333(Part A), 557–563. https://doi.org/10.1016/0039-6028(95)00317-7
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1995 | Journal Article | LibreCat-ID: 13850
Kress, C., Fiedler, M., Schmidt, W. G., & Bechstedt, F. (1995). Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B, 50(23), 17697–17700. https://doi.org/10.1103/physrevb.50.17697
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1995 | Journal Article | LibreCat-ID: 13800
Kress, C., Fiedler, M., Schmidt, W. G., & Bechstedt, F. (1995). Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. Surface Science, 331–333, 1152–1156. https://doi.org/10.1016/0039-6028(95)00160-3
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1995 | Journal Article | LibreCat-ID: 13851
Schmidt, W. G., & Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B, 50(23), 17651–17654. https://doi.org/10.1103/physrevb.50.17651
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1995 | Journal Article | LibreCat-ID: 13801
Schmidt, W. G., & Srivastava, G. P. (1995). III-V(110)/Sb(1 ML): structural and dynamical properties. Surface Science, 331–333(Part A), 540–545. https://doi.org/10.1016/0039-6028(95)00304-5
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| DOI
1995 | Journal Article | LibreCat-ID: 13852
Schmidt, W. G., & Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. Physical Review B, 50(23), 17280–17291. https://doi.org/10.1103/physrevb.50.17280
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1994 | Journal Article | LibreCat-ID: 43593
Meier, T., von Plessen, G., Feldmann, J., Göbel, E. O., Thomas, P., Goosen, K. W., Kuo, J. M., & Kopf, R. F. (1994). Influence of scattering on the formation of Wannier-Stark ladders and Bloch oscillations in semiconductor superlattices. Physical Review B, 49(19), 14058–14061. https://doi.org/10.1103/PhysRevB.49.14058
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1994 | Journal Article | LibreCat-ID: 43592
Meier, T., von Plessen, G., Thomas, P., & Koch, S. W. (1994). Coherent electric-field effects in semiconductors. Physical Review Letters, 73(6), 902–905. https://doi.org/10.1103/PhysRevLett.73.902
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