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19 Publications
2022 | Journal Article | LibreCat-ID: 32108
Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth. 2022;593. doi:10.1016/j.jcrysgro.2022.126756
LibreCat
| DOI
2022 | Journal Article | LibreCat-ID: 31241
Verma AK, Bopp F, Finley JJ, Jonas B, Zrenner A, Reuter D. Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. Journal of Crystal Growth. Published online 2022. doi:10.1016/j.jcrysgro.2022.126715
LibreCat
| DOI
2021 | Journal Article | LibreCat-ID: 20900
Albert M, Golla C, Meier C. Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy. Journal of Crystal Growth. 2021;557. doi:10.1016/j.jcrysgro.2020.126009
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 17434
Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020. doi:10.1016/j.jcrysgro.2020.125597
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 34091
Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner J. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020;537. doi:10.1016/j.jcrysgro.2020.125597
LibreCat
| DOI
2019 | Journal Article | LibreCat-ID: 7800
Henksmeier T, Shvarkov S, Trapp A, Reuter D. Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth. 2019;512:164-168. doi:10.1016/j.jcrysgro.2019.02.006
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 4810
Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth. 2017;477:149-153. doi:10.1016/j.jcrysgro.2017.01.022
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 7020
Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth. 2017;481:7-10. doi:10.1016/j.jcrysgro.2017.10.029
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 7027
Scholz S, Schott R, Labud PA, et al. Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth. 2017;470:46-50. doi:10.1016/j.jcrysgro.2017.04.013
LibreCat
| DOI
2016 | Journal Article | LibreCat-ID: 7024
Sharma N, Reuter D. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy. Journal of Crystal Growth. 2016;477:225-229. doi:10.1016/j.jcrysgro.2016.11.117
LibreCat
| DOI