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19 Publications


2022 | Journal Article | LibreCat-ID: 32108
Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez, A. M., Voigt, M., Grundmeier, G., & Reuter, D. (2022). Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth, 593, Article 126756. https://doi.org/10.1016/j.jcrysgro.2022.126756
LibreCat | DOI
 

2022 | Journal Article | LibreCat-ID: 31241
Verma, A. K., Bopp, F., Finley, J. J., Jonas, B., Zrenner, A., & Reuter, D. (2022). Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. Journal of Crystal Growth, Article 126715. https://doi.org/10.1016/j.jcrysgro.2022.126715
LibreCat | DOI
 

2021 | Journal Article | LibreCat-ID: 20900
Albert, M., Golla, C., & Meier, C. (2021). Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy. Journal of Crystal Growth, 557. https://doi.org/10.1016/j.jcrysgro.2020.126009
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 17434
Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner, J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2020.125597
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 34091
Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner, J. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth, 537, Article 125597. https://doi.org/10.1016/j.jcrysgro.2020.125597
LibreCat | DOI
 

2019 | Journal Article | LibreCat-ID: 7800
Henksmeier, T., Shvarkov, S., Trapp, A., & Reuter, D. (2019). Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth, 512, 164–168. https://doi.org/10.1016/j.jcrysgro.2019.02.006
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2017 | Journal Article | LibreCat-ID: 4810
Wecker, T., Jostmeier, T., Rieger, T., Neumann, E., Pawlis, A., Betz, M., … As, D. J. (2017). Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth, 477, 149–153. https://doi.org/10.1016/j.jcrysgro.2017.01.022
LibreCat | DOI
 

2017 | Journal Article | LibreCat-ID: 7020
Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth, 481, 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029
LibreCat | DOI
 

2017 | Journal Article | LibreCat-ID: 7027
Scholz, S., Schott, R., Labud, P. A., Somsen, C., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth, 470, 46–50. https://doi.org/10.1016/j.jcrysgro.2017.04.013
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2016 | Journal Article | LibreCat-ID: 7024
Sharma, N., & Reuter, D. (2016). A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy. Journal of Crystal Growth, 477, 225–229. https://doi.org/10.1016/j.jcrysgro.2016.11.117
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