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19 Publications
2013 | Journal Article | LibreCat-ID: 3959
Bürger, M., et al. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.” Journal of Crystal Growth, vol. 378, Elsevier BV, 2013, pp. 287–90, doi:10.1016/j.jcrysgro.2012.12.058.
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2012 | Journal Article | LibreCat-ID: 4104
Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal of Crystal Growth, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:10.1016/j.jcrysgro.2012.10.011.
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2010 | Journal Article | LibreCat-ID: 7705
Trunov, K., et al. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman Spin Splitting Studies of Hole Quantum Wires.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010, pp. 48–51, doi:10.1016/j.jcrysgro.2010.11.060.
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| DOI
2010 | Journal Article | LibreCat-ID: 4144
Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042.
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2010 | Journal Article | LibreCat-ID: 4214
Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041.
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2010 | Journal Article | LibreCat-ID: 13830
Rauls, E., et al. “Understanding the Cubic AlN Growth Plane from First Principles.” Journal of Crystal Growth, vol. 312, 2010, pp. 2892–95, doi:10.1016/j.jcrysgro.2010.07.027.
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| DOI
2009 | Journal Article | LibreCat-ID: 4192
Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.
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2006 | Journal Article | LibreCat-ID: 7646
Regolin, I., et al. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.” Journal of Crystal Growth, vol. 298, Elsevier BV, 2006, pp. 607–11, doi:10.1016/j.jcrysgro.2006.10.122.
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2006 | Journal Article | LibreCat-ID: 8664
Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, pp. 278–84, doi:10.1016/j.jcrysgro.2006.05.051.
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