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13 Publications


2019 | Journal Article | LibreCat-ID: 12930
@article{Köthemann_Weber_Lindner_Meier_2019, title={High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy}, volume={34}, DOI={10.1088/1361-6641/ab3536}, number={9095009}, journal={Semiconductor Science and Technology}, author={Köthemann, Ronja and Weber, Nils and Lindner, Jörg K N and Meier, Cedrik}, year={2019} }
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2018 | Journal Article | LibreCat-ID: 19215
@article{Kandemir_Akbali_Kahraman_Badalov_Ozcan_Iyikanat_Sahin_2018, title={Structural, electronic and phononic properties of PtSe2: from monolayer to bulk}, DOI={10.1088/1361-6641/aacba2}, number={085002}, journal={Semiconductor Science and Technology}, author={Kandemir, A and Akbali, B and Kahraman, Z and Badalov, S V and Ozcan, M and Iyikanat, F and Sahin, H}, year={2018} }
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2018 | Journal Article | LibreCat-ID: 7009
@article{Schuster_Kim_Batke_Reuter_Wieck_2018, title={Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures}, volume={33}, DOI={10.1088/1361-6641/aad83d}, number={9095020}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2018} }
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2013 | Journal Article | LibreCat-ID: 7282
@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/8/085012}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }
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2013 | Journal Article | LibreCat-ID: 7295
@article{Koop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013, title={On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/2/025006}, number={2025006}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Koop, E J and Iqbal, M J and Limbach, F and Boute, M and van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C H}, year={2013} }
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2011 | Journal Article | LibreCat-ID: 4545
@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011, title={In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}, volume={26}, DOI={10.1088/0268-1242/26/10/105023}, number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }
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2010 | Journal Article | LibreCat-ID: 4549
@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={10.1088/0268-1242/25/7/075003}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }
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2005 | Journal Article | LibreCat-ID: 8693
@article{Knop_Richter_Maßmann_Wieser_Kunze_Reuter_Riedesel_Wieck_2005, title={Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene}, DOI={10.1088/0268-1242/20/8/031}, journal={Semiconductor Science and Technology}, author={Knop, M and Richter, M and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and Wieck, A D}, year={2005}, pages={814–818} }
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2004 | Journal Article | LibreCat-ID: 8692
@article{Kähler_Knop_Kunze_Reuter_Wieck_2004, title={Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation}, DOI={10.1088/0268-1242/20/2/006}, journal={Semiconductor Science and Technology}, author={Kähler, D and Knop, M and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2004}, pages={140–143} }
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2003 | Journal Article | LibreCat-ID: 8730
@article{Apetrii_Fischer_Kunze_Reuter_Wieck_2003, title={Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope}, DOI={10.1088/0268-1242/17/7/317}, journal={Semiconductor Science and Technology}, author={Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2003}, pages={735–739} }
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2002 | Journal Article | LibreCat-ID: 8768
@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }
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2002 | Journal Article | LibreCat-ID: 7684
@article{Reuter_Meier_Riedesel_Wieck_2002, title={Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping}, volume={17}, DOI={10.1088/0268-1242/17/6/315}, number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}, year={2002}, pages={585–589} }
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2002 | Journal Article | LibreCat-ID: 8747
@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }
LibreCat | DOI
 

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