Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515.
Download
No fulltext has been uploaded.
Conference Paper
| English
Author
Horstmann, J.T.;
Hilleringmann, UlrichLibreCat;
Goser, K.
Department
Publishing Year
Proceedings Title
28th European Solid-State Device Research Conference
Page
512-515
LibreCat-ID
Cite this
Horstmann JT, Hilleringmann U, Goser K. Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. In: 28th European Solid-State Device Research Conference. ; 1998:512-515.
Horstmann, J. T., Hilleringmann, U., & Goser, K. (1998). Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. 28th European Solid-State Device Research Conference, 512–515.
@inproceedings{Horstmann_Hilleringmann_Goser_1998, title={Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors}, booktitle={28th European Solid-State Device Research Conference}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={1998}, pages={512–515} }
Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” In 28th European Solid-State Device Research Conference, 512–15, 1998.
J. T. Horstmann, U. Hilleringmann, and K. Goser, “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors,” in 28th European Solid-State Device Research Conference, 1998, pp. 512–515.
Horstmann, J. T., et al. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” 28th European Solid-State Device Research Conference, 1998, pp. 512–15.
Google Scholar