Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)

R.M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier, T. Niendorf, H.J. Maier, K. Lischka, D.J. As, J. Lindner, Physica Status Solidi (C) 9 (2012) 1028–1031.

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Abstract
We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular beam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive ion etching process. Atomic force microscopy and scanning electron microscopy show that the selectivearea- grown cubic GaN nucleates in two structurally different domains, which most probably originate from the substrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to two different surface morphologies. The dominant phase within these domains was measured by electron backscatter diffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy.
Publishing Year
Journal Title
physica status solidi (c)
Volume
9
Issue
3-4
Page
1028-1031
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Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). physica status solidi (c). 2012;9(3-4):1028-1031. doi:10.1002/pssc.201100174
Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., … Lindner, J. (2012). Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). Physica Status Solidi (C), 9(3–4), 1028–1031. https://doi.org/10.1002/pssc.201100174
@article{Kemper_Häberlen_Schupp_Weinl_Bürger_Ruth_Meier_Niendorf_Maier_Lischka_et al._2012, title={Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)}, volume={9}, DOI={10.1002/pssc.201100174}, number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Häberlen, M. and Schupp, T. and Weinl, M. and Bürger, M. and Ruth, M. and Meier, Cedrik and Niendorf, T. and Maier, H. J. and Lischka, K. and et al.}, year={2012}, pages={1028–1031} }
Kemper, R. M., M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, Cedrik Meier, et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC (001).” Physica Status Solidi (C) 9, no. 3–4 (2012): 1028–31. https://doi.org/10.1002/pssc.201100174.
R. M. Kemper et al., “Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001),” physica status solidi (c), vol. 9, no. 3–4, pp. 1028–1031, 2012.
Kemper, R. M., et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC (001).” Physica Status Solidi (C), vol. 9, no. 3–4, Wiley, 2012, pp. 1028–31, doi:10.1002/pssc.201100174.
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