Generation of injection currents in (110)-oriented GaAs quantum wells: experimental observation and development of a microscopic theory

M. Bieler, K. Pierz, U. Siegner, P. Dawson, H.T. Duc, J. Förstner, T. Meier, in: K.-T. Tsen, J.-J. Song, M. Betz, A.Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, SPIE, 2009, pp. 721404-721404–13.

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Abstract
We have experimentally investigated injection currents generated by all-optical excitation of GaAs/AlGaAs quantum wells excited with 130 fs optical pulses. The currents have been detected via free-space THz experiments at room temperature. Our experiments prove that Coulomb effects strongly influence injection currents. This becomes most prominently visible when exciting light-hole exciton transitions. At this photon energy we observe a pronounced phase shift of the current transients which is due to oppositely oriented heavy-hole and light-hole type contributions. We are currently developing a microscopic theory based on a 14×14 k.p model in combination with the semiconductor Bloch equations to describe the observed features quantitatively. The combined theoretical and experimental approach will allow us to analyze the influence of the bandstructure and interaction effects on the injection current amplitude and current dynamics.
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Proceedings Title
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Page
721404-721404-13
Conference
SPIE OPTO: Integrated Optoelectronic Devices, 2009
Conference Location
San Jose (California / USA)
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Bieler M, Pierz K, Siegner U, et al. Generation of injection currents in (110)-oriented GaAs quantum wells: experimental observation and development of a microscopic theory. In: Tsen K-T, Song J-J, Betz M, Elezzabi AY, eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII. SPIE; 2009:721404-721404-721413. doi:10.1117/12.811841
Bieler, M., Pierz, K., Siegner, U., Dawson, P., Duc, H. T., Förstner, J., & Meier, T. (2009). Generation of injection currents in (110)-oriented GaAs quantum wells: experimental observation and development of a microscopic theory. In K.-T. Tsen, J.-J. Song, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII (pp. 721404-721404–721413). San Jose (California / USA): SPIE. https://doi.org/10.1117/12.811841
@inproceedings{Bieler_Pierz_Siegner_Dawson_Duc_Förstner_Meier_2009, title={Generation of injection currents in (110)-oriented GaAs quantum wells: experimental observation and development of a microscopic theory}, DOI={10.1117/12.811841}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII}, publisher={SPIE}, author={Bieler, M. and Pierz, K. and Siegner, U. and Dawson, P. and Duc, H. T. and Förstner, Jens and Meier, Torsten}, editor={Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi, Abdulhakem Y.Editors}, year={2009}, pages={721404-721404–13} }
Bieler, M., K. Pierz, U. Siegner, P. Dawson, H. T. Duc, Jens Förstner, and Torsten Meier. “Generation of Injection Currents in (110)-Oriented GaAs Quantum Wells: Experimental Observation and Development of a Microscopic Theory.” In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, edited by Kong-Thon Tsen, Jin-Joo Song, Markus Betz, and Abdulhakem Y. Elezzabi, 721404-721404–13. SPIE, 2009. https://doi.org/10.1117/12.811841.
M. Bieler et al., “Generation of injection currents in (110)-oriented GaAs quantum wells: experimental observation and development of a microscopic theory,” in Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, San Jose (California / USA), 2009, pp. 721404-721404–13.
Bieler, M., et al. “Generation of Injection Currents in (110)-Oriented GaAs Quantum Wells: Experimental Observation and Development of a Microscopic Theory.” Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, edited by Kong-Thon Tsen et al., SPIE, 2009, pp. 721404-721404–13, doi:10.1117/12.811841.

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