An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).

Download
No fulltext has been uploaded.
Journal Article | Published | English
Author
; ; ; ; ;
Abstract
We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.
Publishing Year
Journal Title
Applied Physics Letters
Volume
97
Issue
14
Article Number
143101
LibreCat-ID

Cite this

Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812
@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }
Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.
M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812.

Export

Marked Publications

Open Data LibreCat

Search this title in

Google Scholar