Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020).

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Journal Article | Published | English
Author
Wang, D. Q.; Reuter, DirkLibreCat; Wieck, A. D.; Hamilton, A. R.; Klochan, O.
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Journal Title
Applied Physics Letters
Article Number
032102
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Wang DQ, Reuter D, Wieck AD, Hamilton AR, Klochan O. Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters. 2020. doi:10.1063/5.0009462
Wang, D. Q., Reuter, D., Wieck, A. D., Hamilton, A. R., & Klochan, O. (2020). Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters. https://doi.org/10.1063/5.0009462
@article{Wang_Reuter_Wieck_Hamilton_Klochan_2020, title={Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential}, DOI={10.1063/5.0009462}, number={032102}, journal={Applied Physics Letters}, author={Wang, D. Q. and Reuter, Dirk and Wieck, A. D. and Hamilton, A. R. and Klochan, O.}, year={2020} }
Wang, D. Q., Dirk Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan. “Two-Dimensional Lateral Surface Superlattices in GaAs Heterostructures with Independent Control of Carrier Density and Modulation Potential.” Applied Physics Letters, 2020. https://doi.org/10.1063/5.0009462.
D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan, “Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential,” Applied Physics Letters, 2020.
Wang, D. Q., et al. “Two-Dimensional Lateral Surface Superlattices in GaAs Heterostructures with Independent Control of Carrier Density and Modulation Potential.” Applied Physics Letters, 032102, 2020, doi:10.1063/5.0009462.

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