Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices
L. Mai, D. Zanders, E. Subaşı, E. Ciftyurek, C. Hoppe, D. Rogalla, W. Gilbert, M.T. de los Arcos de Pedro, K. Schierbaum, G. Grundmeier, C. Bock, A. Devi, ACS Applied Materials & Interfaces (2019) 3169–3180.
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| English
Author
Mai, Lukas;
Zanders, David;
Subaşı, Ersoy;
Ciftyurek, Engin;
Hoppe, Christian;
Rogalla, Detlef;
Gilbert, Wolfram;
de los Arcos de Pedro, Maria TeresaLibreCat;
Schierbaum, Klaus;
Grundmeier, GuidoLibreCat;
Bock, Claudia;
Devi, Anjana
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Journal Title
ACS Applied Materials & Interfaces
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3169-3180
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Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces. Published online 2019:3169-3180. doi:10.1021/acsami.8b16443
Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., Gilbert, W., de los Arcos de Pedro, M. T., Schierbaum, K., Grundmeier, G., Bock, C., & Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces, 3169–3180. https://doi.org/10.1021/acsami.8b16443
@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_de los Arcos de Pedro_Schierbaum_Grundmeier_et al._2019, title={Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443}, journal={ACS Applied Materials & Interfaces}, author={Mai, Lukas and Zanders, David and Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla, Detlef and Gilbert, Wolfram and de los Arcos de Pedro, Maria Teresa and Schierbaum, Klaus and Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }
Mai, Lukas, David Zanders, Ersoy Subaşı, Engin Ciftyurek, Christian Hoppe, Detlef Rogalla, Wolfram Gilbert, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, 3169–80. https://doi.org/10.1021/acsami.8b16443.
L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces, pp. 3169–3180, 2019, doi: 10.1021/acsami.8b16443.
Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, pp. 3169–80, doi:10.1021/acsami.8b16443.
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