Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices

L. Mai, D. Zanders, E. Subaşı, E. Ciftyurek, C. Hoppe, D. Rogalla, W. Gilbert, T. de los Arcos, K. Schierbaum, G. Grundmeier, C. Bock, A. Devi, ACS Applied Materials & Interfaces (2019) 3169–3180.

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ACS Applied Materials & Interfaces
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3169-3180
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Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces. 2019:3169-3180. doi:10.1021/acsami.8b16443
Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., … Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces, 3169–3180. https://doi.org/10.1021/acsami.8b16443
@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_Arcos_Schierbaum_Grundmeier_et al._2019, title={Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443}, journal={ACS Applied Materials & Interfaces}, author={Mai, Lukas and Zanders, David and Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla, Detlef and Gilbert, Wolfram and Arcos, Teresa de los and Schierbaum, Klaus and Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }
Mai, Lukas, David Zanders, Ersoy Subaşı, Engin Ciftyurek, Christian Hoppe, Detlef Rogalla, Wolfram Gilbert, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, 3169–80. https://doi.org/10.1021/acsami.8b16443.
L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces, pp. 3169–3180, 2019.
Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, pp. 3169–80, doi:10.1021/acsami.8b16443.

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