Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics

In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications. Therefore, a high-k nanocomposite combining the flexibility of its polymericmatrix and the high permittivity of the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional photolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics. The impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during photolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized. Additionally, the implementation of this sacrificial layer can be used for future complementary circuit design.