Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer
M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).
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Journal Article
| Published
| English
Author
Scharnberg, M.;
Zaporojtchenko, V.;
Adelung, R.;
Faupel, F.;
Pannemann, C.;
Diekmann, T.;
Hilleringmann, UlrichLibreCat
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Publishing Year
Journal Title
Applied Physics Letters
Volume
90
Issue
1
Article Number
013501
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Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926
Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926
@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }
Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.
M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” Applied Physics Letters, vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.
Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.
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