Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs
O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A. Thiede, M. Grundmann, IEEE Transactions on Electron Devices 66 (2019) 3376–3381.
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Journal Article
| Published
| English
Author
Lahr, Oliver;
Zhang, Zhipeng;
Grotjahn, Frank;
Schlupp, Peter;
Vogt, Sofie;
von Wenckstern, Holger;
Thiede, AndreasLibreCat;
Grundmann, Marius
Department
Abstract
Metal-semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc-tin oxide (ZTO) channel layers. Characteristics of transistors and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec and field-effect mobilities of 5 cm 2 /Vs. Furthermore, all devices show long-term stability over a period of more than 200 days. Inverters fabricated using either MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky diode FET logic (SDFL) approach is applied to shift the switching voltage which is a requirement for cascading of inverters for realization of ring oscillators.
Publishing Year
Journal Title
IEEE Transactions on Electron Devices
Volume
66
Issue
8
Page
3376-3381
LibreCat-ID
Cite this
Lahr O, Zhang Z, Grotjahn F, et al. Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs. IEEE Transactions on Electron Devices. 2019;66(8):3376-3381. doi:10.1109/ted.2019.2922696
Lahr, O., Zhang, Z., Grotjahn, F., Schlupp, P., Vogt, S., von Wenckstern, H., Thiede, A., & Grundmann, M. (2019). Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs. IEEE Transactions on Electron Devices, 66(8), 3376–3381. https://doi.org/10.1109/ted.2019.2922696
@article{Lahr_Zhang_Grotjahn_Schlupp_Vogt_von Wenckstern_Thiede_Grundmann_2019, title={Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs}, volume={66}, DOI={10.1109/ted.2019.2922696}, number={8}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Lahr, Oliver and Zhang, Zhipeng and Grotjahn, Frank and Schlupp, Peter and Vogt, Sofie and von Wenckstern, Holger and Thiede, Andreas and Grundmann, Marius}, year={2019}, pages={3376–3381} }
Lahr, Oliver, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt, Holger von Wenckstern, Andreas Thiede, and Marius Grundmann. “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs.” IEEE Transactions on Electron Devices 66, no. 8 (2019): 3376–81. https://doi.org/10.1109/ted.2019.2922696.
O. Lahr et al., “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs,” IEEE Transactions on Electron Devices, vol. 66, no. 8, pp. 3376–3381, 2019, doi: 10.1109/ted.2019.2922696.
Lahr, Oliver, et al. “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs.” IEEE Transactions on Electron Devices, vol. 66, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2019, pp. 3376–81, doi:10.1109/ted.2019.2922696.
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