Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique
J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.
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Horstmann, J.T.;
Hilleringmann, UlrichLibreCat;
Goser, K.
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2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)
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Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560
Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). https://doi.org/10.1109/iecon.2000.972560
@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={10.1109/iecon.2000.972560}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }
Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE, 2002. https://doi.org/10.1109/iecon.2000.972560.
J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: 10.1109/iecon.2000.972560.
Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002, doi:10.1109/iecon.2000.972560.
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