An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology
U. Ali, M. Bober, A. Thiede, in: 2016 German Microwave Conference (GeMiC), IEEE, 2016.
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Ali, U.;
Bober, M.;
Thiede, AndreasLibreCat
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2016 German Microwave Conference (GeMiC)
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Ali U, Bober M, Thiede A. An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology. In: 2016 German Microwave Conference (GeMiC). IEEE; 2016. doi:10.1109/gemic.2016.7461611
Ali, U., Bober, M., & Thiede, A. (2016). An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology. 2016 German Microwave Conference (GeMiC). https://doi.org/10.1109/gemic.2016.7461611
@inproceedings{Ali_Bober_Thiede_2016, title={An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology}, DOI={10.1109/gemic.2016.7461611}, booktitle={2016 German Microwave Conference (GeMiC)}, publisher={IEEE}, author={Ali, U. and Bober, M. and Thiede, Andreas}, year={2016} }
Ali, U., M. Bober, and Andreas Thiede. “An Integrated 118.4 To122 GHz Low Noise Phase-Locked Loop (PLL) in 0.13 Μm SiGe BiCMOS Technology.” In 2016 German Microwave Conference (GeMiC). IEEE, 2016. https://doi.org/10.1109/gemic.2016.7461611.
U. Ali, M. Bober, and A. Thiede, “An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology,” 2016, doi: 10.1109/gemic.2016.7461611.
Ali, U., et al. “An Integrated 118.4 To122 GHz Low Noise Phase-Locked Loop (PLL) in 0.13 Μm SiGe BiCMOS Technology.” 2016 German Microwave Conference (GeMiC), IEEE, 2016, doi:10.1109/gemic.2016.7461611.
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