Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology
U. Ali, G. Fischer, A. Thiede, in: 2015 German Microwave Conference, IEEE, 2015.
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Thiede, AndreasLibreCat
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2015 German Microwave Conference
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Ali U, Fischer G, Thiede A. Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology. In: 2015 German Microwave Conference. IEEE; 2015. doi:10.1109/gemic.2015.7107827
Ali, U., Fischer, G., & Thiede, A. (2015). Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology. 2015 German Microwave Conference. https://doi.org/10.1109/gemic.2015.7107827
@inproceedings{Ali_Fischer_Thiede_2015, title={Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology}, DOI={10.1109/gemic.2015.7107827}, booktitle={2015 German Microwave Conference}, publisher={IEEE}, author={Ali, U. and Fischer, G. and Thiede, Andreas}, year={2015} }
Ali, U., G. Fischer, and Andreas Thiede. “Low Power Fundamental VCO Design in D-Band Using 0.13 µm SiGe BiCMOS Technology.” In 2015 German Microwave Conference. IEEE, 2015. https://doi.org/10.1109/gemic.2015.7107827.
U. Ali, G. Fischer, and A. Thiede, “Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology,” 2015, doi: 10.1109/gemic.2015.7107827.
Ali, U., et al. “Low Power Fundamental VCO Design in D-Band Using 0.13 µm SiGe BiCMOS Technology.” 2015 German Microwave Conference, IEEE, 2015, doi:10.1109/gemic.2015.7107827.
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