A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology
U. Ali, A. Thiede, in: 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG), IEEE, 2013.
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2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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Ali U, Thiede A. A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology. In: 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG). IEEE; 2013. doi:10.1109/iscdg.2013.6656297
Ali, U., & Thiede, A. (2013). A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology. 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG). https://doi.org/10.1109/iscdg.2013.6656297
@inproceedings{Ali_Thiede_2013, title={A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology}, DOI={10.1109/iscdg.2013.6656297}, booktitle={2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)}, publisher={IEEE}, author={Ali, U. and Thiede, Andreas}, year={2013} }
Ali, U., and Andreas Thiede. “A Millimeter Wave Quad-Phase Ring Oscillator Using 0.13 µm SiGe BiCMOS HBT Technology.” In 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG). IEEE, 2013. https://doi.org/10.1109/iscdg.2013.6656297.
U. Ali and A. Thiede, “A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology,” 2013, doi: 10.1109/iscdg.2013.6656297.
Ali, U., and Andreas Thiede. “A Millimeter Wave Quad-Phase Ring Oscillator Using 0.13 µm SiGe BiCMOS HBT Technology.” 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG), IEEE, 2013, doi:10.1109/iscdg.2013.6656297.
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