Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers

M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).

Download
Restricted Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf 13.01 MB
Journal Article | Published | English
Author
; ; ; ;
Department
Abstract
Growth of GaN on Si(111) potentially enables cost efficient manufacturing of optoelectronic devices due to the possibility of using cheap large area substrates. However, GaN layers grown on Si(111) substrates suffer from high tensile stress that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge is the high dislocation density of GaN layers grown on Si(111) which is detrimental to device performance. In this paper we show that a step graded AlGaN buffer layer can compensate tensile stress, avoiding cracking, and at the same time reduce the dislocation density. An additional SiNx interlayer in the GaN layer is shown to further reduce the dislocation density down to the high 108 /cm². Weak beam dark field TEM was used to study the dislocation reduction in cross sectional samples and for comparison of the step graded AlGaN buffer layer structure to a continuously graded one. STEM ADF was used to determine the exact location of dislocation bending with respect to the position of the interface.
Publishing Year
Journal Title
Journal of Physics: Conference Series
Volume
209
Article Number
012017
ISSN
LibreCat-ID

Cite this

Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of Physics: Conference Series. 2010;209. doi:10.1088/1742-6596/209/1/012017
Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., & Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of Physics: Conference Series, 209. https://doi.org/10.1088/1742-6596/209/1/012017
@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209}, DOI={10.1088/1742-6596/209/1/012017}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and Humphreys, C J}, year={2010} }
Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” Journal of Physics: Conference Series 209 (2010). https://doi.org/10.1088/1742-6596/209/1/012017.
M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” Journal of Physics: Conference Series, vol. 209, 2010.
Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” Journal of Physics: Conference Series, vol. 209, 012017, IOP Publishing, 2010, doi:10.1088/1742-6596/209/1/012017.
Main File(s)
File Name
Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf 13.01 MB
Access Level
Restricted Closed Access
Last Uploaded
2018-08-28T12:40:20Z


Export

Marked Publications

Open Data LibreCat

Search this title in

Google Scholar