Bottom-Up Routes to Porous Silicon Carbide

S. Greulich-Weber, B. Friedel, Materials Science Forum 615–617 (2009) 637–640.

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Journal Article | Published | English
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Abstract
We report on constructive methods providing a large range of high purity porous SiC products. All methods are based on modified sol-gel processes combined with carbothermal re¬duction. We obtain monodisperse regular pores of well defined diameters by using carbon sphere templates which are removed after SiC infiltration. A different way is a sol-gel based conversion of graphite bodies into SiC, which transfers the porosity from the graphite matrix into the final SiC product. Thus a large variety of porosity features are available, originating either from natural poro¬sity of graphite or from priorly created nano-/ microstructures in the carbonaceous base material. Whereas all our pristine porous sol-gel derived silicon carbide products are semi-insulating, doping is possible, during the growth to modifiy the electrical and optical properties.
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Materials Science Forum
Volume
615-617
Page
637-640
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Greulich-Weber S, Friedel B. Bottom-Up Routes to Porous Silicon Carbide. Materials Science Forum. 2009;615-617:637-640. doi:10.4028/www.scientific.net/msf.615-617.637
Greulich-Weber, S., & Friedel, B. (2009). Bottom-Up Routes to Porous Silicon Carbide. Materials Science Forum, 615617, 637–640. https://doi.org/10.4028/www.scientific.net/msf.615-617.637
@article{Greulich-Weber_Friedel_2009, title={Bottom-Up Routes to Porous Silicon Carbide}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.637}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber, Siegmund and Friedel, B.}, year={2009}, pages={637–640} }
Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” Materials Science Forum 615–617 (2009): 637–40. https://doi.org/10.4028/www.scientific.net/msf.615-617.637.
S. Greulich-Weber and B. Friedel, “Bottom-Up Routes to Porous Silicon Carbide,” Materials Science Forum, vol. 615–617, pp. 637–640, 2009.
Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp. 637–40, doi:10.4028/www.scientific.net/msf.615-617.637.

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