GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

D. Zhu, C. McAleese, K.K. McLaughlin, M. Häberlen, C.O. Salcianu, E.J. Thrush, M.J. Kappers, W.A. Phillips, P. Lane, D.J. Wallis, T. Martin, M. Astles, S. Thomas, A. Pakes, M. Heuken, C.J. Humphreys, in: K.P. Streubel, H. Jeon, L.-W. Tu (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, SPIE, 2009.

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Abstract
The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device.
Publishing Year
Proceedings Title
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII
Volume
7231
Article Number
723118
Conference
SPIE OPTO: Integrated Optoelectronic Devices, 2009
Conference Location
San Jose, California (USA)
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Zhu D, McAleese C, McLaughlin KK, et al. GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. In: Streubel KP, Jeon H, Tu L-W, eds. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII. Vol 7231. SPIE; 2009. doi:10.1117/12.814919
Zhu, D., McAleese, C., McLaughlin, K. K., Häberlen, M., Salcianu, C. O., Thrush, E. J., … Humphreys, C. J. (2009). GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. In K. P. Streubel, H. Jeon, & L.-W. Tu (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII (Vol. 7231). San Jose, California (USA): SPIE. https://doi.org/10.1117/12.814919
@inproceedings{Zhu_McAleese_McLaughlin_Häberlen_Salcianu_Thrush_Kappers_Phillips_Lane_Wallis_et al._2009, title={GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE}, volume={7231}, DOI={10.1117/12.814919}, number={723118}, booktitle={Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII}, publisher={SPIE}, author={Zhu, D. and McAleese, C. and McLaughlin, K. K. and Häberlen, M. and Salcianu, C. O. and Thrush, E. J. and Kappers, M. J. and Phillips, W. A. and Lane, P. and Wallis, D. J. and et al.}, editor={Streubel, Klaus P. and Jeon, Heonsu and Tu, Li-WeiEditors}, year={2009} }
Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers, et al. “GaN-Based LEDs Grown on 6-Inch Diameter Si (111) Substrates by MOVPE.” In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, edited by Klaus P. Streubel, Heonsu Jeon, and Li-Wei Tu, Vol. 7231. SPIE, 2009. https://doi.org/10.1117/12.814919.
D. Zhu et al., “GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE,” in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, San Jose, California (USA), 2009, vol. 7231.
Zhu, D., et al. “GaN-Based LEDs Grown on 6-Inch Diameter Si (111) Substrates by MOVPE.” Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, edited by Klaus P. Streubel et al., vol. 7231, 723118, SPIE, 2009, doi:10.1117/12.814919.

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