Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC

M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi (B) 253 (2016) 778–782.

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Journal Article | Published | English
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Abstract
Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films.
Publishing Year
Journal Title
physica status solidi (b)
Volume
253
Issue
4
Page
778-782
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Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. physica status solidi (b). 2016;253(4):778-782. doi:10.1002/pssb.201552592
Rüsing, M., Wecker, T., Berth, G., As, D. J., & Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. Physica Status Solidi (B), 253(4), 778–782. https://doi.org/10.1002/pssb.201552592
@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253}, DOI={10.1002/pssb.201552592}, number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing, M. and Wecker, T. and Berth, Gerhard and As, D. J. and Zrenner, Artur}, year={2016}, pages={778–782} }
Rüsing, M., T. Wecker, Gerhard Berth, D. J. As, and Artur Zrenner. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (B) 253, no. 4 (2016): 778–82. https://doi.org/10.1002/pssb.201552592.
M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica status solidi (b), vol. 253, no. 4, pp. 778–782, 2016.
Rüsing, M., et al. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (B), vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:10.1002/pssb.201552592.

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