Field-induced exciton ionization studied by four-wave mixing

T. Meier, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, R.F. Kopf, in: K. Hess (Ed.), Hot Carriers in Semiconductors, Plenum Press, New York, 1996, pp. 3–6.

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Book Chapter | Published | English
Author
Meier, TorstenLibreCat ; Koch, M.; von Plessen, G.; Feldmann, J.; Koch, S.W.; Thomas, P.; Göbel, E.O.; Goosen, K.W.; Kuo, J.M.; Kopf, R.F.
Book Editor
Hess, K.
Abstract
The dynamics of carriers induced by electric fields in semiconductor superlattices has received much interest in recent years. Phenomena like Bloch oscillations and negative differential velocity in these structures have been studied using a variety of experimental techniques [1–5]. One particular point of interest has been the transition of the miniband regime to the Bloch oscillation regime with increasing electric field [6,7]. Cw spectra of strongly-coupled superlattices have evidenced that this transition is concomitant with a rapid field-induced ionization of the zero-field miniband exciton [5,8]. While it has been pointed out from the theoretical side that the field-induced ionization process strongly influences the coherent dynamics in the transition region [9], no systematic experimental investigation of the ionization process has been carried out so far. One interesting question that such an investigation could help to answer is to what extent this ionization process differs from the well-documented case of field-induced exciton ionization in bulk semiconductors.
Publishing Year
Book Title
Hot Carriers in Semiconductors
Page
3-6
Conference
Proceedings of 9th Conference on Hot Carriers, 1995
Conference Location
Chicago
LibreCat-ID

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Meier T, Koch M, von Plessen G, et al. Field-induced exciton ionization studied by four-wave mixing. In: Hess K, ed. Hot Carriers in Semiconductors. Plenum Press; 1996:3-6. doi:10.1007/978-1-4613-0401-2_1
Meier, T., Koch, M., von Plessen, G., Feldmann, J., Koch, S. W., Thomas, P., Göbel, E. O., Goosen, K. W., Kuo, J. M., & Kopf, R. F. (1996). Field-induced exciton ionization studied by four-wave mixing. In K. Hess (Ed.), Hot Carriers in Semiconductors (pp. 3–6). Plenum Press. https://doi.org/10.1007/978-1-4613-0401-2_1
@inbook{Meier_Koch_von Plessen_Feldmann_Koch_Thomas_Göbel_Goosen_Kuo_Kopf_1996, place={New York}, title={Field-induced exciton ionization studied by four-wave mixing}, DOI={10.1007/978-1-4613-0401-2_1}, booktitle={Hot Carriers in Semiconductors}, publisher={Plenum Press}, author={Meier, Torsten and Koch, M. and von Plessen, G. and Feldmann, J. and Koch, S.W. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Kuo, J.M. and Kopf, R.F.}, editor={Hess, K.}, year={1996}, pages={3–6} }
Meier, Torsten, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, and R.F. Kopf. “Field-Induced Exciton Ionization Studied by Four-Wave Mixing.” In Hot Carriers in Semiconductors, edited by K. Hess, 3–6. New York: Plenum Press, 1996. https://doi.org/10.1007/978-1-4613-0401-2_1.
T. Meier et al., “Field-induced exciton ionization studied by four-wave mixing,” in Hot Carriers in Semiconductors, K. Hess, Ed. New York: Plenum Press, 1996, pp. 3–6.
Meier, Torsten, et al. “Field-Induced Exciton Ionization Studied by Four-Wave Mixing.” Hot Carriers in Semiconductors, edited by K. Hess, Plenum Press, 1996, pp. 3–6, doi:10.1007/978-1-4613-0401-2_1.

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