Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars

T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.

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Conference Paper | English
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Conference
14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14)
Conference Location
Sendai (Japan)
Conference Date
2018-10-21 – 2018-10-25
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Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars. In: ; 2018.
Riedl, T., Kunnathully, V., Trapp, A., Reuter, D., & Lindner, J. (2018). Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars. Presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan).
@inproceedings{Riedl_Kunnathully_Trapp_Reuter_Lindner_2018, title={Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars}, author={Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner, Jörg}, year={2018} }
Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Dirk Reuter, and Jörg Lindner. “Strain Relaxation in InAs Nanoislands on Top of GaAs (111) A Nanopillars,” 2018.
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.
Riedl, Thomas, et al. Strain Relaxation in InAs Nanoislands on Top of GaAs (111) A Nanopillars. 2018.

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