Excitons and biexcitons as mesoscopic probes of disorder in semiconductor heterostructures
T. Meier, E. Finger, S. Kraft, M. Hofmann, S. Nau, G. Bernatz, W. Stolz, P. Thomas, S.W. Koch, W.W. Rühle, in: Quantum Electronics and Laser Science Conference, Optical Society of America, 2001, p. 269.
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Conference Paper
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Author
Meier, TorstenLibreCat 
;
Finger, E.;
Kraft, S.;
Hofmann, M.;
Nau, S.;
Bernatz, G.;
Stolz, W.;
Thomas, P.;
Koch, S.W.;
Rühle, W.W.
;
Finger, E.;
Kraft, S.;
Hofmann, M.;
Nau, S.;
Bernatz, G.;
Stolz, W.;
Thomas, P.;
Koch, S.W.;
Rühle, W.W.Department
Abstract
Summary form only given. Optical and electronic properties of semiconductor heterostructures are strongly influenced by inherent disorder effects. The disorder consists of alloy disorder in ternary or quaternary compound semiconductors and interface roughness in semiconductor quantum wells. The spatial scales of disorder depend on the growth process. The disorder scale has up to now been extremely difficult to determine by macroscopic optical experiments. Here, we use excitons and biexcitons as mesoscopic probes in coherent excitation spectroscopy (CES) to reveal the spatial scale of disorder.
Publishing Year
Proceedings Title
Quantum Electronics and Laser Science Conference
Page
269
Conference
Quantum Electronics and Laser Science Conference
Conference Location
Baltimore, MD, USA
Conference Date
2001-05-11 – 2001-05-11
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LibreCat-ID
Cite this
Meier T, Finger E, Kraft S, et al. Excitons and biexcitons as mesoscopic probes of disorder in semiconductor heterostructures. In: Quantum Electronics and Laser Science Conference. Optical Society of America; 2001:269. doi:10.1109/QELS.2001.962232
Meier, T., Finger, E., Kraft, S., Hofmann, M., Nau, S., Bernatz, G., Stolz, W., Thomas, P., Koch, S. W., & Rühle, W. W. (2001). Excitons and biexcitons as mesoscopic probes of disorder in semiconductor heterostructures. Quantum Electronics and Laser Science Conference, 269. https://doi.org/10.1109/QELS.2001.962232
@inproceedings{Meier_Finger_Kraft_Hofmann_Nau_Bernatz_Stolz_Thomas_Koch_Rühle_2001, title={Excitons and biexcitons as mesoscopic probes of disorder in semiconductor heterostructures}, DOI={10.1109/QELS.2001.962232}, booktitle={Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Finger, E. and Kraft, S. and Hofmann, M. and Nau, S. and Bernatz, G. and Stolz, W. and Thomas, P. and Koch, S.W. and Rühle, W.W.}, year={2001}, pages={269} }
Meier, Torsten, E. Finger, S. Kraft, M. Hofmann, S. Nau, G. Bernatz, W. Stolz, P. Thomas, S.W. Koch, and W.W. Rühle. “Excitons and Biexcitons as Mesoscopic Probes of Disorder in Semiconductor Heterostructures.” In Quantum Electronics and Laser Science Conference, 269. Optical Society of America, 2001. https://doi.org/10.1109/QELS.2001.962232.
T. Meier et al., “Excitons and biexcitons as mesoscopic probes of disorder in semiconductor heterostructures,” in Quantum Electronics and Laser Science Conference, Baltimore, MD, USA, 2001, p. 269, doi: 10.1109/QELS.2001.962232.
Meier, Torsten, et al. “Excitons and Biexcitons as Mesoscopic Probes of Disorder in Semiconductor Heterostructures.” Quantum Electronics and Laser Science Conference, Optical Society of America, 2001, p. 269, doi:10.1109/QELS.2001.962232.
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