Distribution of exciton binding-energies in disordered semiconductor quantum-wells
T. Meier, A. Euteneuer, E. Finger, M. Hofmann, W. Stolz, P. Thomas, S.W. Koch, W.W. Ruhle, in: Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, IEEE, 1992, p. 204.
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Conference Paper
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Author
Meier, TorstenLibreCat 
;
Euteneuer, A.;
Finger, E.;
Hofmann, M.;
Stolz, W.;
Thomas, P.;
Koch, S.W.;
Ruhle, W.W.
;
Euteneuer, A.;
Finger, E.;
Hofmann, M.;
Stolz, W.;
Thomas, P.;
Koch, S.W.;
Ruhle, W.W.Department
Abstract
Summary form only given. Partly non-degenerate four-wave mixing is able to detect coherent coupling between excitonic resonances like e.g. light-hole and heavy-hole excitons or between an exciton and its continuum states. We apply an extension of this method, which we call selective coherent spectroscopy (SCS), to symmetrically strained (GaIn)As/Ga(PAs) multiple quantum-wells. The samples are excited simultaneously by a picosecond pulse with wavevector k/sub 1/ and a 100 fs pulse with wavevector k/sub 2/. The central wavelength of the picosecond pulse is scanned over the entire spectrum of the 100 fs pulse and the four-wave mixing signal in the direction 2k/sub 2/-k/sub 1/ is detected at a fixed energy. This scan provides an SCS spectrum.
Publishing Year
Proceedings Title
Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference
Page
204
Conference
Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference
Conference Location
Baltimore, MD, USA
Conference Date
1992-05-23 – 1992-05-28
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Cite this
Meier T, Euteneuer A, Finger E, et al. Distribution of exciton binding-energies in disordered semiconductor quantum-wells. In: Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference. IEEE; 1992:204. doi:10.1109/QELS.1999.807538
Meier, T., Euteneuer, A., Finger, E., Hofmann, M., Stolz, W., Thomas, P., Koch, S. W., & Ruhle, W. W. (1992). Distribution of exciton binding-energies in disordered semiconductor quantum-wells. Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 204. https://doi.org/10.1109/QELS.1999.807538
@inproceedings{Meier_Euteneuer_Finger_Hofmann_Stolz_Thomas_Koch_Ruhle_1992, title={Distribution of exciton binding-energies in disordered semiconductor quantum-wells}, DOI={10.1109/QELS.1999.807538}, booktitle={Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference}, publisher={IEEE}, author={Meier, Torsten and Euteneuer, A. and Finger, E. and Hofmann, M. and Stolz, W. and Thomas, P. and Koch, S.W. and Ruhle, W.W.}, year={1992}, pages={204} }
Meier, Torsten, A. Euteneuer, E. Finger, M. Hofmann, W. Stolz, P. Thomas, S.W. Koch, and W.W. Ruhle. “Distribution of Exciton Binding-Energies in Disordered Semiconductor Quantum-Wells.” In Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 204. IEEE, 1992. https://doi.org/10.1109/QELS.1999.807538.
T. Meier et al., “Distribution of exciton binding-energies in disordered semiconductor quantum-wells,” in Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, Baltimore, MD, USA, 1992, p. 204, doi: 10.1109/QELS.1999.807538.
Meier, Torsten, et al. “Distribution of Exciton Binding-Energies in Disordered Semiconductor Quantum-Wells.” Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, IEEE, 1992, p. 204, doi:10.1109/QELS.1999.807538.
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