Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm

M. Hofmann, N.C. Gerhardt, A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, W.W. Rühle, in: Physics and Simulation of Optoelectronic Devices IX, 2001, pp. 256–266.

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Hofmann, Martin; Gerhardt, Nils ChristopherLibreCat ; Wagner, Anke; Ellmers, Christoph; Höhnsdorf, Falko; Koch, Jörg; Leu, Simone; Stolz, Wolfgang; Rühle, Wolfgang W.
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Physics and simulation of optoelectronic devices IX
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256 - 266
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Hofmann M, Gerhardt NC, Wagner A, et al. Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm. In: Physics and Simulation of Optoelectronic Devices IX. ; 2001:256-266. doi:10.1117/12.432573
Hofmann, M., Gerhardt, N. C., Wagner, A., Ellmers, C., Höhnsdorf, F., Koch, J., Leu, S., Stolz, W., & Rühle, W. W. (2001). Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm. Physics and Simulation of Optoelectronic Devices IX, 256–266. https://doi.org/10.1117/12.432573
@inproceedings{Hofmann_Gerhardt_Wagner_Ellmers_Höhnsdorf_Koch_Leu_Stolz_Rühle_2001, title={Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm}, DOI={10.1117/12.432573}, booktitle={Physics and simulation of optoelectronic devices IX}, author={Hofmann, Martin and Gerhardt, Nils Christopher and Wagner, Anke and Ellmers, Christoph and Höhnsdorf, Falko and Koch, Jörg and Leu, Simone and Stolz, Wolfgang and Rühle, Wolfgang W.}, year={2001}, pages={256–266} }
Hofmann, Martin, Nils Christopher Gerhardt, Anke Wagner, Christoph Ellmers, Falko Höhnsdorf, Jörg Koch, Simone Leu, Wolfgang Stolz, and Wolfgang W. Rühle. “Emission Dynamics of (GaIn)(NAs)/GaAs Lasers Emitting at 1.3 Μm.” In Physics and Simulation of Optoelectronic Devices IX, 256–66, 2001. https://doi.org/10.1117/12.432573.
M. Hofmann et al., “Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm,” in Physics and simulation of optoelectronic devices IX, 2001, pp. 256–266, doi: 10.1117/12.432573.
Hofmann, Martin, et al. “Emission Dynamics of (GaIn)(NAs)/GaAs Lasers Emitting at 1.3 Μm.” Physics and Simulation of Optoelectronic Devices IX, 2001, pp. 256–66, doi:10.1117/12.432573.

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