A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy
N. Sharma, D. Reuter, Journal of Crystal Growth 477 (2016) 225–229.
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Journal Article
| Published
| English
Author
Sharma, Nandlal;
Reuter, DirkLibreCat
Publishing Year
Journal Title
Journal of Crystal Growth
Volume
477
Page
225-229
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Sharma N, Reuter D. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy. Journal of Crystal Growth. 2016;477:225-229. doi:10.1016/j.jcrysgro.2016.11.117
Sharma, N., & Reuter, D. (2016). A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy. Journal of Crystal Growth, 477, 225–229. https://doi.org/10.1016/j.jcrysgro.2016.11.117
@article{Sharma_Reuter_2016, title={A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy}, volume={477}, DOI={10.1016/j.jcrysgro.2016.11.117}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Sharma, Nandlal and Reuter, Dirk}, year={2016}, pages={225–229} }
Sharma, Nandlal, and Dirk Reuter. “A Modified Gradient Approach for the Growth of Low-Density InAs Quantum Dot Molecules by Molecular Beam Epitaxy.” Journal of Crystal Growth 477 (2016): 225–29. https://doi.org/10.1016/j.jcrysgro.2016.11.117.
N. Sharma and D. Reuter, “A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy,” Journal of Crystal Growth, vol. 477, pp. 225–229, 2016.
Sharma, Nandlal, and Dirk Reuter. “A Modified Gradient Approach for the Growth of Low-Density InAs Quantum Dot Molecules by Molecular Beam Epitaxy.” Journal of Crystal Growth, vol. 477, Elsevier BV, 2016, pp. 225–29, doi:10.1016/j.jcrysgro.2016.11.117.
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