Electric field distribution and exciton recombination line shape in GaAs

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Materials Research Express 3 (2016).

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Journal Article | Published | English
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Journal Title
Materials Research Express
Volume
3
Issue
5
Article Number
056201
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Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Electric field distribution and exciton recombination line shape in GaAs. Materials Research Express. 2016;3(5). doi:10.1088/2053-1591/3/5/056201
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2016). Electric field distribution and exciton recombination line shape in GaAs. Materials Research Express, 3(5). https://doi.org/10.1088/2053-1591/3/5/056201
@article{Schuster_Kim_Batke_Reuter_Wieck_2016, title={Electric field distribution and exciton recombination line shape in GaAs}, volume={3}, DOI={10.1088/2053-1591/3/5/056201}, number={5056201}, journal={Materials Research Express}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2016} }
Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Electric Field Distribution and Exciton Recombination Line Shape in GaAs.” Materials Research Express 3, no. 5 (2016). https://doi.org/10.1088/2053-1591/3/5/056201.
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Electric field distribution and exciton recombination line shape in GaAs,” Materials Research Express, vol. 3, no. 5, 2016.
Schuster, J., et al. “Electric Field Distribution and Exciton Recombination Line Shape in GaAs.” Materials Research Express, vol. 3, no. 5, 056201, IOP Publishing, 2016, doi:10.1088/2053-1591/3/5/056201.

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