Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells

G.J. Schinner, J. Repp, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, A.O. Govorov, A.W. Holleitner, J.P. Kotthaus, Physical Review Letters 110 (2013).

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Journal Article | Published | English
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Physical Review Letters
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110
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12
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Schinner GJ, Repp J, Schubert E, et al. Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells. Physical Review Letters. 2013;110(12). doi:10.1103/physrevlett.110.127403
Schinner, G. J., Repp, J., Schubert, E., Rai, A. K., Reuter, D., Wieck, A. D., … Kotthaus, J. P. (2013). Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells. Physical Review Letters, 110(12). https://doi.org/10.1103/physrevlett.110.127403
@article{Schinner_Repp_Schubert_Rai_Reuter_Wieck_Govorov_Holleitner_Kotthaus_2013, title={Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells}, volume={110}, DOI={10.1103/physrevlett.110.127403}, number={12}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Schinner, G. J. and Repp, J. and Schubert, E. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Govorov, A. O. and Holleitner, A. W. and Kotthaus, J. P.}, year={2013} }
Schinner, G. J., J. Repp, E. Schubert, A. K. Rai, Dirk Reuter, A. D. Wieck, A. O. Govorov, A. W. Holleitner, and J. P. Kotthaus. “Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells.” Physical Review Letters 110, no. 12 (2013). https://doi.org/10.1103/physrevlett.110.127403.
G. J. Schinner et al., “Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells,” Physical Review Letters, vol. 110, no. 12, 2013.
Schinner, G. J., et al. “Confinement and Interaction of Single Indirect Excitons in a Voltage-Controlled Trap Formed Inside Double InGaAs Quantum Wells.” Physical Review Letters, vol. 110, no. 12, American Physical Society (APS), 2013, doi:10.1103/physrevlett.110.127403.

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