Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures

A.M. Burke, D.E.J. Waddington, D.J. Carrad, R.W. Lyttleton, H.H. Tan, P.J. Reece, O. Klochan, A.R. Hamilton, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Physical Review B 86 (2012).

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Physical Review B
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86
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16
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Burke AM, Waddington DEJ, Carrad DJ, et al. Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures. Physical Review B. 2012;86(16). doi:10.1103/physrevb.86.165309
Burke, A. M., Waddington, D. E. J., Carrad, D. J., Lyttleton, R. W., Tan, H. H., Reece, P. J., … Micolich, A. P. (2012). Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures. Physical Review B, 86(16). https://doi.org/10.1103/physrevb.86.165309
@article{Burke_Waddington_Carrad_Lyttleton_Tan_Reece_Klochan_Hamilton_Rai_Reuter_et al._2012, title={Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures}, volume={86}, DOI={10.1103/physrevb.86.165309}, number={16}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Burke, A. M. and Waddington, D. E. J. and Carrad, D. J. and Lyttleton, R. W. and Tan, H. H. and Reece, P. J. and Klochan, O. and Hamilton, A. R. and Rai, A. and Reuter, Dirk and et al.}, year={2012} }
Burke, A. M., D. E. J. Waddington, D. J. Carrad, R. W. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, et al. “Origin of Gate Hysteresis Inp-Type Si-Doped AlGaAs/GaAs Heterostructures.” Physical Review B 86, no. 16 (2012). https://doi.org/10.1103/physrevb.86.165309.
A. M. Burke et al., “Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures,” Physical Review B, vol. 86, no. 16, 2012.
Burke, A. M., et al. “Origin of Gate Hysteresis Inp-Type Si-Doped AlGaAs/GaAs Heterostructures.” Physical Review B, vol. 86, no. 16, American Physical Society (APS), 2012, doi:10.1103/physrevb.86.165309.

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