Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples
D. Diaconescu, A. Goldschmidt, D. Reuter, A.D. Wieck, Physica Status Solidi (B) (2008) 276–283.
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Journal Article
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| English
Author
Diaconescu, D.;
Goldschmidt, A.;
Reuter, DirkLibreCat;
Wieck, A. D.
Publishing Year
Journal Title
physica status solidi (b)
Page
276-283
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Diaconescu D, Goldschmidt A, Reuter D, Wieck AD. Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples. physica status solidi (b). 2008:276-283. doi:10.1002/pssb.200743345
Diaconescu, D., Goldschmidt, A., Reuter, D., & Wieck, A. D. (2008). Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples. Physica Status Solidi (B), 276–283. https://doi.org/10.1002/pssb.200743345
@article{Diaconescu_Goldschmidt_Reuter_Wieck_2008, title={Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}, DOI={10.1002/pssb.200743345}, journal={physica status solidi (b)}, author={Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}, year={2008}, pages={276–283} }
Diaconescu, D., A. Goldschmidt, Dirk Reuter, and A. D. Wieck. “Quantum Hall Effect in Long and in Mobility Adjusted GaAs/AlxGa1-XAs Samples.” Physica Status Solidi (B), 2008, 276–83. https://doi.org/10.1002/pssb.200743345.
D. Diaconescu, A. Goldschmidt, D. Reuter, and A. D. Wieck, “Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples,” physica status solidi (b), pp. 276–283, 2008.
Diaconescu, D., et al. “Quantum Hall Effect in Long and in Mobility Adjusted GaAs/AlxGa1-XAs Samples.” Physica Status Solidi (B), 2008, pp. 276–83, doi:10.1002/pssb.200743345.
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