Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures

D. Kähler, U. Kunze, D. Reuter, A.D. Wieck, Microelectronic Engineering (2002) 619–623.

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Journal Article | Published | English
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Microelectronic Engineering
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619-623
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Kähler D, Kunze U, Reuter D, Wieck AD. Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. Microelectronic Engineering. 2002:619-623. doi:10.1016/s0167-9317(02)00474-4
Kähler, D., Kunze, U., Reuter, D., & Wieck, A. D. (2002). Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. Microelectronic Engineering, 619–623. https://doi.org/10.1016/s0167-9317(02)00474-4
@article{Kähler_Kunze_Reuter_Wieck_2002, title={Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures}, DOI={10.1016/s0167-9317(02)00474-4}, journal={Microelectronic Engineering}, author={Kähler, D. and Kunze, U. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={619–623} }
Kähler, D., U. Kunze, Dirk Reuter, and A.D. Wieck. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.” Microelectronic Engineering, 2002, 619–23. https://doi.org/10.1016/s0167-9317(02)00474-4.
D. Kähler, U. Kunze, D. Reuter, and A. D. Wieck, “Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures,” Microelectronic Engineering, pp. 619–623, 2002.
Kähler, D., et al. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.” Microelectronic Engineering, 2002, pp. 619–23, doi:10.1016/s0167-9317(02)00474-4.

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