Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)

D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, A.. Wieck, Materials Science and Engineering: B (2002) 230–233.

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Journal Article | Published | English
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Materials Science and Engineering: B
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230-233
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Reuter D, Schafmeister P, Koch J, Schmidt K, Wieck A. Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). Materials Science and Engineering: B. 2002:230-233. doi:10.1016/s0921-5107(01)00871-6
Reuter, D., Schafmeister, P., Koch, J., Schmidt, K., & Wieck, A. . (2002). Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). Materials Science and Engineering: B, 230–233. https://doi.org/10.1016/s0921-5107(01)00871-6
@article{Reuter_Schafmeister_Koch_Schmidt_Wieck_2002, title={Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)}, DOI={10.1016/s0921-5107(01)00871-6}, journal={Materials Science and Engineering: B}, author={Reuter, Dirk and Schafmeister, P and Koch, J and Schmidt, K and Wieck, A.D}, year={2002}, pages={230–233} }
Reuter, Dirk, P Schafmeister, J Koch, K Schmidt, and A.D Wieck. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” Materials Science and Engineering: B, 2002, 230–33. https://doi.org/10.1016/s0921-5107(01)00871-6.
D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, and A. . Wieck, “Growth of InAs quantum dots on focussed ion beam implanted GaAs(100),” Materials Science and Engineering: B, pp. 230–233, 2002.
Reuter, Dirk, et al. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” Materials Science and Engineering: B, 2002, pp. 230–33, doi:10.1016/s0921-5107(01)00871-6.

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