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31 Publications
2023 | Journal Article | LibreCat-ID: 46132
Littmann, M., Reuter, D., & As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. Physica Status Solidi (b), 260(7). https://doi.org/10.1002/pssb.202300034
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2022 | Journal Article | LibreCat-ID: 35232
Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508. https://doi.org/10.1002/pssb.202200508
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2022 | Journal Article | LibreCat-ID: 37656
Glahn, L. J., Ruiz Alvarado, I. A., Neufeld, S., Zare Pour, M. A., Paszuk, A., Ostheimer, D., Shekarabi, S., Romanyuk, O., Moritz, D. C., Hofmann, J. P., Jaegermann, W., Hannappel, T., & Schmidt, W. G. (2022). Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties. Physica Status Solidi (b), 259(11), Article 2200308. https://doi.org/10.1002/pssb.202200308
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2021 | Journal Article | LibreCat-ID: 40244
Meier, L., & Schmidt, W. G. (2021). GaInP/AlInP(001) Interfaces from Density Functional Theory. Physica Status Solidi (b), 259(1), Article 2100462. https://doi.org/10.1002/pssb.202100462
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2020 | Journal Article | LibreCat-ID: 23840
Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2020). Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900522
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2020 | Journal Article | LibreCat-ID: 23841
Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532
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2020 | Journal Article | LibreCat-ID: 40233
Meier, L., Braun, C., Hannappel, T., & Schmidt, W. G. (2020). Band Alignment at Ga x In 1– x P/Al y In 1– y P Alloy Interfaces from Hybrid Density Functional Theory Calculations. Physica Status Solidi (b), 258(2), Article 2000463. https://doi.org/10.1002/pssb.202000463
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2019 | Journal Article | LibreCat-ID: 15444 | 
Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2019). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. Physica Status Solidi (b), Article 1900532. https://doi.org/10.1002/pssb.201900532
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2018 | Journal Article | LibreCat-ID: 17065
Esser, N., & Schmidt, W. G. (2018). Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. Physica Status Solidi (b), 256, Article 1800314. https://doi.org/10.1002/pssb.201800314
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2010 | Journal Article | LibreCat-ID: 4210
Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., & Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. Physica Status Solidi (B), 247(7), 1753–1756. https://doi.org/10.1002/pssb.200983537
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