Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer

M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.

Download
Restricted Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf 911.93 KB
Journal Article | Published | English
Author
; ; ; ; ;
Department
Abstract
In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of reasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown samples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.
Publishing Year
Journal Title
physica status solidi (b)
Volume
247
Issue
7
Page
1753-1756
LibreCat-ID

Cite this

Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica status solidi (b). 2010;247(7):1753-1756. doi:10.1002/pssb.200983537
Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., & Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. Physica Status Solidi (B), 247(7), 1753–1756. https://doi.org/10.1002/pssb.200983537
@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={10.1002/pssb.200983537}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }
Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B) 247, no. 7 (2010): 1753–56. https://doi.org/10.1002/pssb.200983537.
M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.
Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B), vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:10.1002/pssb.200983537.
Main File(s)
File Name
Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf 911.93 KB
Access Level
Restricted Closed Access
Last Uploaded
2018-08-28T12:43:31Z


Export

Marked Publications

Open Data LibreCat

Search this title in

Google Scholar