Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment

H.T. Duc, M. Pochwala, J. Förstner, T. Meier, S. Priyadarshi, A.M. Racu, K. Pierz, U. Siegner, M. Bieler, in: K.-T. Tsen, J.-J. Song, M. Betz, A.Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, SPIE, 2011.

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We experimentally and theoretically investigate injection currents generated by femtosecond single-color circularly-polarized laser pulses in (110)-oriented GaAs quantum wells. The current measurements are performed by detecting the emitted Terahertz radiation at room temperature. The microscopic theory is based on a 14 x 14 k • p band-structure calculation in combination with the multi-subband semiconductor Bloch equations. For symmetric GaAs quantum wells grown in (110) direction, an oscillatory dependence of the injection currents on the exciting photon energy is obtained. The results of the microscopic theory are in good agreement with the measurements.
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Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV
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Duc HT, Pochwala M, Förstner J, et al. Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment. In: Tsen K-T, Song J-J, Betz M, Elezzabi AY, eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV. SPIE; 2011. doi:10.1117/12.876972
Duc, H. T., Pochwala, M., Förstner, J., Meier, T., Priyadarshi, S., Racu, A. M., … Bieler, M. (2011). Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment. In K.-T. Tsen, J.-J. Song, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV. SPIE. https://doi.org/10.1117/12.876972
@inproceedings{Duc_Pochwala_Förstner_Meier_Priyadarshi_Racu_Pierz_Siegner_Bieler_2011, title={Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment}, DOI={10.1117/12.876972}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV}, publisher={SPIE}, author={Duc, H. T. and Pochwala, M. and Förstner, Jens and Meier, Torsten and Priyadarshi, S. and Racu, A. M. and Pierz, K. and Siegner, U. and Bieler, M.}, editor={Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi, Abdulhakem Y.Editors}, year={2011} }
Duc, H. T., M. Pochwala, Jens Förstner, Torsten Meier, S. Priyadarshi, A. M. Racu, K. Pierz, U. Siegner, and M. Bieler. “Injection Currents in (110)-Oriented GaAs/AlGaAs Quantum Wells: Recent Progress in Theory and Experiment.” In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, edited by Kong-Thon Tsen, Jin-Joo Song, Markus Betz, and Abdulhakem Y. Elezzabi. SPIE, 2011. https://doi.org/10.1117/12.876972.
H. T. Duc et al., “Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment,” in Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 2011.
Duc, H. T., et al. “Injection Currents in (110)-Oriented GaAs/AlGaAs Quantum Wells: Recent Progress in Theory and Experiment.” Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, edited by Kong-Thon Tsen et al., SPIE, 2011, doi:10.1117/12.876972.

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