Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment
H.T. Duc, M. Pochwala, J. Förstner, T. Meier, S. Priyadarshi, A.M. Racu, K. Pierz, U. Siegner, M. Bieler, in: K.-T. Tsen, J.-J. Song, M. Betz, A.Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, SPIE, 2011.
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Conference Paper
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Author
Duc, H. T.;
Pochwala, M.;
Förstner, JensLibreCat 
;
Meier, TorstenLibreCat ;
Priyadarshi, S.;
Racu, A. M.;
Pierz, K.;
Siegner, U.;
Bieler, M.
;
Meier, TorstenLibreCat ;
Priyadarshi, S.;
Racu, A. M.;
Pierz, K.;
Siegner, U.;
Bieler, M.Editor
Tsen, Kong-Thon;
Song, Jin-Joo;
Betz, Markus;
Elezzabi, Abdulhakem Y.
Department
Abstract
We experimentally and theoretically investigate injection currents generated by femtosecond single-color circularly-polarized laser pulses in (110)-oriented GaAs quantum wells. The current measurements are performed by detecting the emitted Terahertz radiation at room temperature. The microscopic theory is based on a 14 x 14 k • p band-structure calculation in combination with the multi-subband semiconductor Bloch equations. For symmetric GaAs quantum wells grown in (110) direction, an oscillatory dependence of the injection currents on the exciting photon energy is obtained. The results of the microscopic theory are in good agreement with the measurements.
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Publishing Year
Proceedings Title
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV
forms.conference.field.series_title_volume.label
SPIE Proceedings
Volume
7937
Article Number
79370U
LibreCat-ID
Cite this
Duc HT, Pochwala M, Förstner J, et al. Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment. In: Tsen K-T, Song J-J, Betz M, Elezzabi AY, eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV. Vol 7937. SPIE Proceedings. SPIE; 2011. doi:10.1117/12.876972
Duc, H. T., Pochwala, M., Förstner, J., Meier, T., Priyadarshi, S., Racu, A. M., Pierz, K., Siegner, U., & Bieler, M. (2011). Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment. In K.-T. Tsen, J.-J. Song, M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV (No. 79370U; Vol. 7937). SPIE. https://doi.org/10.1117/12.876972
@inproceedings{Duc_Pochwala_Förstner_Meier_Priyadarshi_Racu_Pierz_Siegner_Bieler_2011, series={SPIE Proceedings}, title={Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment}, volume={7937}, DOI={10.1117/12.876972}, number={79370U}, booktitle={Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV}, publisher={SPIE}, author={Duc, H. T. and Pochwala, M. and Förstner, Jens and Meier, Torsten and Priyadarshi, S. and Racu, A. M. and Pierz, K. and Siegner, U. and Bieler, M.}, editor={Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi, Abdulhakem Y.}, year={2011}, collection={SPIE Proceedings} }
Duc, H. T., M. Pochwala, Jens Förstner, Torsten Meier, S. Priyadarshi, A. M. Racu, K. Pierz, U. Siegner, and M. Bieler. “Injection Currents in (110)-Oriented GaAs/AlGaAs Quantum Wells: Recent Progress in Theory and Experiment.” In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, edited by Kong-Thon Tsen, Jin-Joo Song, Markus Betz, and Abdulhakem Y. Elezzabi, Vol. 7937. SPIE Proceedings. SPIE, 2011. https://doi.org/10.1117/12.876972.
H. T. Duc et al., “Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment,” in Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 2011, vol. 7937, doi: 10.1117/12.876972.
Duc, H. T., et al. “Injection Currents in (110)-Oriented GaAs/AlGaAs Quantum Wells: Recent Progress in Theory and Experiment.” Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, edited by Kong-Thon Tsen et al., vol. 7937, 79370U, SPIE, 2011, doi:10.1117/12.876972.
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