Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs

D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics Letters 82 (2003) 481–483.

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Journal Article | Published | English
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Applied Physics Letters
Volume
82
Issue
3
Page
481-483
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Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters. 2003;82(3):481-483. doi:10.1063/1.1539925
Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., & Wieck, A. D. (2003). Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters, 82(3), 481–483. https://doi.org/10.1063/1.1539925
@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs}, volume={82}, DOI={10.1063/1.1539925}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter, D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.}, year={2003}, pages={481–483} }
Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters 82, no. 3 (2003): 481–83. https://doi.org/10.1063/1.1539925.
D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck, “Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs,” Applied Physics Letters, vol. 82, no. 3, pp. 481–483, 2003.
Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters, vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:10.1063/1.1539925.

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