Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping
W.G. Schmidt, K. Seino, Current Applied Physics 6 (2006) 331–333.
Download
No fulltext has been uploaded.
Journal Article
| Published
| English
Author
Schmidt, Wolf GeroLibreCat 
;
Seino, K.
;
Seino, K.Publishing Year
Journal Title
Current Applied Physics
Volume
6
Page
331-333
ISSN
LibreCat-ID
Cite this
Schmidt WG, Seino K. Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping. Current Applied Physics. 2006;6:331-333. doi:10.1016/j.cap.2005.11.012
Schmidt, W. G., & Seino, K. (2006). Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping. Current Applied Physics, 6, 331–333. https://doi.org/10.1016/j.cap.2005.11.012
@article{Schmidt_Seino_2006, title={Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping}, volume={6}, DOI={10.1016/j.cap.2005.11.012}, journal={Current Applied Physics}, author={Schmidt, Wolf Gero and Seino, K.}, year={2006}, pages={331–333} }
Schmidt, Wolf Gero, and K. Seino. “Si(001) c(4×2)–p(2×2) Surface Phase Transitions Induced by Electric Fields and Doping.” Current Applied Physics 6 (2006): 331–33. https://doi.org/10.1016/j.cap.2005.11.012.
W. G. Schmidt and K. Seino, “Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping,” Current Applied Physics, vol. 6, pp. 331–333, 2006.
Schmidt, Wolf Gero, and K. Seino. “Si(001) c(4×2)–p(2×2) Surface Phase Transitions Induced by Electric Fields and Doping.” Current Applied Physics, vol. 6, 2006, pp. 331–33, doi:10.1016/j.cap.2005.11.012.
Google Scholar