Se-induced 3d core-level shifts of GaAs(110)

P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146.

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Journal Article | Published | English
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Journal Title
Applied Surface Science
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104-105
Page
141-146
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Article Processing Charge funded by the Deutsche Forschungsgemeinschaft and the Open Access Publication Fund of LibreCat University.
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Käckell P, Schmidt WG, Bechstedt F. Se-induced 3d core-level shifts of GaAs(110). Applied Surface Science. 1996;104-105:141-146. doi:10.1016/s0169-4332(96)00135-3
Käckell, P., Schmidt, W. G., & Bechstedt, F. (1996). Se-induced 3d core-level shifts of GaAs(110). Applied Surface Science, 104105, 141–146. https://doi.org/10.1016/s0169-4332(96)00135-3
@article{Käckell_Schmidt_Bechstedt_1996, title={Se-induced 3d core-level shifts of GaAs(110)}, volume={104–105}, DOI={10.1016/s0169-4332(96)00135-3}, journal={Applied Surface Science}, author={Käckell, Peter and Schmidt, Wolf Gero and Bechstedt, Friedhelm}, year={1996}, pages={141–146} }
Käckell, Peter, Wolf Gero Schmidt, and Friedhelm Bechstedt. “Se-Induced 3d Core-Level Shifts of GaAs(110).” Applied Surface Science 104–105 (1996): 141–46. https://doi.org/10.1016/s0169-4332(96)00135-3.
P. Käckell, W. G. Schmidt, and F. Bechstedt, “Se-induced 3d core-level shifts of GaAs(110),” Applied Surface Science, vol. 104–105, pp. 141–146, 1996.
Käckell, Peter, et al. “Se-Induced 3d Core-Level Shifts of GaAs(110).” Applied Surface Science, vol. 104–105, 1996, pp. 141–46, doi:10.1016/s0169-4332(96)00135-3.

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