Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.
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Journal Article
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| English
Author
Schmidt, Wolf GeroLibreCat 
;
Bechstedt, F.
;
Bechstedt, F.Publishing Year
Journal Title
Physical Review B
Volume
50
Issue
23
Page
17651-17654
LibreCat-ID
Cite this
Schmidt WG, Bechstedt F. Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B. 1995;50(23):17651-17654. doi:10.1103/physrevb.50.17651
Schmidt, W. G., & Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B, 50(23), 17651–17654. https://doi.org/10.1103/physrevb.50.17651
@article{Schmidt_Bechstedt_1995, title={Exchange reactions versus adsorption geometries for Se/GaAs(110)}, volume={50}, DOI={10.1103/physrevb.50.17651}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17651–17654} }
Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” Physical Review B 50, no. 23 (1995): 17651–54. https://doi.org/10.1103/physrevb.50.17651.
W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995.
Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” Physical Review B, vol. 50, no. 23, 1995, pp. 17651–54, doi:10.1103/physrevb.50.17651.
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