Se/GaAs(110): Atomic and electronic structure

W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.

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Journal Article | Published | English
Author
Publishing Year
Journal Title
Physical Review B
Volume
50
Issue
23
Page
17280-17291
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Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. Physical Review B. 1995;50(23):17280-17291. doi:10.1103/physrevb.50.17280
Schmidt, W. G., & Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. Physical Review B, 50(23), 17280–17291. https://doi.org/10.1103/physrevb.50.17280
@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): Atomic and electronic structure}, volume={50}, DOI={10.1103/physrevb.50.17280}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17280–17291} }
Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” Physical Review B 50, no. 23 (1995): 17280–91. https://doi.org/10.1103/physrevb.50.17280.
W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.
Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” Physical Review B, vol. 50, no. 23, 1995, pp. 17280–91, doi:10.1103/physrevb.50.17280.

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