Measurement of effective electron mass in biaxial tensile strained silicon on insulator

S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).

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Abstract
We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.
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Journal Title
Applied Physics Letters
Volume
95
Issue
18
Article Number
182101
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Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters. 2009;95(18). doi:10.1063/1.3254330
Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., … Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters, 95(18). https://doi.org/10.1063/1.3254330
@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={10.1063/1.3254330}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }
Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters 95, no. 18 (2009). https://doi.org/10.1063/1.3254330.
S. F. Feste et al., “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” Applied Physics Letters, vol. 95, no. 18, 2009.
Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:10.1063/1.3254330.
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Measurement of effective electron mass in biaxial tensile strained silicon on insulator
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