Measurement of effective electron mass in biaxial tensile strained silicon on insulator
S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).
Download
Journal Article
| Published
| English
Author
Feste, Sebastian F.;
Schäpers, Thomas;
Buca, Dan;
Zhao, Qing Tai;
Knoch, Joachim;
Bouhassoune, Mohammed;
Schindlmayr, ArnoLibreCat 
;
Mantl, Siegfried
;
Mantl, SiegfriedDepartment
Abstract
We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the
effective electron mass in the presence of strain.
Publishing Year
Journal Title
Applied Physics Letters
Volume
95
Issue
18
Article Number
182101
ISSN
eISSN
LibreCat-ID
Cite this
Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters. 2009;95(18). doi:10.1063/1.3254330
Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., … Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters, 95(18). https://doi.org/10.1063/1.3254330
@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={10.1063/1.3254330}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }
Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters 95, no. 18 (2009). https://doi.org/10.1063/1.3254330.
S. F. Feste et al., “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” Applied Physics Letters, vol. 95, no. 18, 2009.
Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:10.1063/1.3254330.
All files available under the following license(s):
Copyright Statement:
This Item is protected by copyright and/or related rights. [...]
Main File(s)
File Name
1.3254330.pdf
198.84 KB
File Title
Measurement of effective electron mass in biaxial tensile strained silicon on insulator
Description
© 2009 American Institute of Physics
Access Level
Open Access
Last Uploaded
2020-08-30T15:29:43Z
Google Scholar