Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off

T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter, Physica Status Solidi (A) 218 (2021) 2000408.

Journal Article | Published | English
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Abstract
GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off using selective etching of Al-containing layers and subsequent transfer to glass substrates. Herein, the selective etching of (111)B-oriented AlxGa1−xAs sacrificial layers (10–50 nm thick) with different aluminum concentrations (x = 0.5–1.0) in 10\% hydrofluoric acid is investigated and compared with standard (100)-oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift-off, the transfer, and the nanopatterning of thin (111)B-oriented GaAs membranes are demonstrated. Atomic force microscopy and high-resolution X-ray diffraction measurements reveal the high structural quality of the transferred GaAs-(111) films.
Publishing Year
Journal Title
physica status solidi (a)
Volume
218
Issue
3
Page
2000408
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Henksmeier T, Eppinger M, Reineke B, Zentgraf T, Meier C, Reuter D. Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off. physica status solidi (a). 2021;218(3):2000408. doi:https://doi.org/10.1002/pssa.202000408
Henksmeier, T., Eppinger, M., Reineke, B., Zentgraf, T., Meier, C., & Reuter, D. (2021). Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off. Physica Status Solidi (A), 218(3), 2000408. https://doi.org/10.1002/pssa.202000408
@article{Henksmeier_Eppinger_Reineke_Zentgraf_Meier_Reuter_2021, title={Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off}, volume={218}, DOI={https://doi.org/10.1002/pssa.202000408}, number={3}, journal={physica status solidi (a)}, author={Henksmeier, Tobias and Eppinger, Martin and Reineke, Bernhard and Zentgraf, Thomas and Meier, Cedrik and Reuter, Dirk}, year={2021}, pages={2000408} }
Henksmeier, Tobias, Martin Eppinger, Bernhard Reineke, Thomas Zentgraf, Cedrik Meier, and Dirk Reuter. “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off.” Physica Status Solidi (A) 218, no. 3 (2021): 2000408. https://doi.org/10.1002/pssa.202000408.
T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, and D. Reuter, “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off,” physica status solidi (a), vol. 218, no. 3, p. 2000408, 2021.
Henksmeier, Tobias, et al. “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off.” Physica Status Solidi (A), vol. 218, no. 3, 2021, p. 2000408, doi:https://doi.org/10.1002/pssa.202000408.

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